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A fast noise and Z-parameter transformations between common emitter and common base InP DHBT

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5 Author(s)
Yong Zhong Xiong ; Microelectron. Center, Nanyang Technol. Univ., Singapore, Singapore ; Geok-Ing Ng ; Hong Wang ; Tan, C.L.
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A new approach has been developed that uses only a simple set of formulas to transform noise and Z-parameters between common emitter and common base configurations. This technique is based on the typical T-model of InP double-heterojunction bipolar transistor and calculated results agree with the experimental results, demonstrating that this approach is useful for many broad-band low-noise communication circuit designs

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:50 ,  Issue: 4 )