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A 125 mm/sup 2/ 1Gb NAND flash memory with 10 MB/s program throughput

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20 Author(s)
Nakamura, H. ; Toshiba Corp., Kanagawa, Japan ; Imamiya, K. ; Himeno, T. ; Yamamura, T.
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A 125 mm/sup 2/ 1Gb NAND flash uses 0.13 /spl mu/m CMOS. The cell is 0.077 /spl mu/m/sup 2/. Chip architecture is changed to reduce chip size and to realize 10.6 MB/s throughput for program and 20 MB/s for read. An on-chip page copy function provides 9.4 MB/s throughput for garbage collection.

Published in:

Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International  (Volume:1 )

Date of Conference:

7-7 Feb. 2002