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Status and prospects for SiC power MOSFETs

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5 Author(s)
J. A. Cooper ; Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; M. R. Melloch ; R. Singh ; A. Agarwal
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SiC electronic device technology has made rapid progress during the past decade. In this paper, we review the evolution of SiC power MOSFETs between 1992 and the present, discuss the current status of device development, identify the critical fabrication issues, and assess the prospects for continued progress and eventual commercialization

Published in:

IEEE Transactions on Electron Devices  (Volume:49 ,  Issue: 4 )