By Topic

Investigation of RuTiN and RuTiO diffusion barrier suggested by a new design concept for future high-density memory capacitors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Yoon, Dong-Soo ; Memory Res. & Dev. Div., Hynix Semicond. Inc, Kyoungki, South Korea ; Jae Sung Roh

As a new design concept for high-density memory capacitors, we proposed both RuTiN (RTN) and the RuTiO (RTO) materials as sacrificial oxygen diffusion barriers. The sheet resistance of the newly developed RuTiN and RuTiO barriers after oxidation was much lower than that of polycrystalline nitride and ternary amorphous barriers reported by others. For the Pt/barrier/TiSi/sub x//n/sup ++/poly-plug/n/sup +/ channel layer/Si contact structure, contact resistance was below 5 kohm even after annealing up to 750/spl deg/C. Correspondingly, the new RuTiN and RuTiO films, as diffusion barriers for oxygen, are very promising materials for high-density capacitors.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 4 )