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GaAs/GaAlAs graded index separate confinement single quantum well single-mode waveguide electroabsorption light modulator

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7 Author(s)
Zhu, L.D. ; Inst. of Semicond., Acad. Sinica, Beijing, China ; Xiong, F.K. ; Wang, C.M. ; Chen, Z.H.
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A GaAs/GaAlAs graded-index separate confinement single quantum well heterostructure single-mode ridge waveguide electroabsorption modulator was fabricated and investigated. For the modulator with a quantum well width of 100 Å and device length of 700 μm and on/off ratio of 29.7 dB , and estimated absorption insertion loss of 3 dB was obtained for TE polarised light with wavelength 8650 Å; and for TM polarisation the on/off ratio was 28.5 dB. With a switching voltage of 1 V, an on/off ratio of 15 dB was achieved. Photocurrent spectra exhibited a red shift of 600 Å of the absorption edge when the voltage applied to the PIN diode was varied from 0.5 to -7 V. The corresponding shift of the room temperature exciton peak energy was 96 meV

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Optoelectronics, IEE Proceedings J  (Volume:138 ,  Issue: 5 )