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High-speed resonant-cavity-enhanced silicon photodetectors on reflecting silicon-on-insulator substrates

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3 Author(s)
Emsley, M.K. ; Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA ; Dosunmu, O. ; Unlu, M.S.

We report a resonant-cavity-enhanced Si photodetector fabricated on a reflecting silicon-on-insulator (SOI) substrate. The substrate incorporates a two period distributed Bragg reflector (DBR) fabricated using a commercially available double-SOI process. The buried DBR provides a 90% reflecting surface. The resonant-cavity-enhanced Si photodetectors have 40% quantum efficiency at 860 nm and response time of 29 ps. These devices are suitable for 10-Gb/s data communications.

Published in:

Photonics Technology Letters, IEEE  (Volume:14 ,  Issue: 4 )