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A monolithically integrated silicon optical receiver fabricated in a 130-nm unmodified complementary metal-oxide-semiconductor process flow on 2-/spl mu/m-thick silicon-on-insulator substrates is reported. The quantum efficiency of the photodetectors was /spl sim/10 % at 850 nm. Sensitivities of -19, -16.6, -15.4, and -10.9 dBm were obtained for bit rates of 1, 2, 3.125, and 5 Gb/s, respectively, at a bit-error rate of 10/sup -9/. Operation up to 8 Gb/s was achieved. The transimpedance gain of the receivers was in the range 46.3 dB to 31 dB /spl Omega/, and the total dissipated power was between 10 and 35 mW depending on the circuit design.