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Low-threshold strain-compensated InGaAs(N) (/spl lambda/ = 1.19-1.31 μm) quantum-well lasers

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2 Author(s)
Tansu, N. ; Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA ; Mawst, L.J.

Highly strained (/spl Delta/a/a /spl sim/ 2.5%) In/sub 0.4/Ga/sub 0.6/As and In/sub 0.4/Ga/sub 0.6/As/sub 0.995/N/sub 0.005/-quantum-well (QW) active lasers utilizing strain-compensating InGaP-GaAsP buffer layers and GaAs/sub 0.85/P/sub 0.15/ barrier layers, grown by metal-organic chemical vapor deposition (MOCVD), are demonstrated with lasing emission wavelength of 1.185 and 1.307 /spl mu/m, respectively. Threshold and transparency current density for the strain compensated InGaAsN QW lasers, with emission wavelength of 1.295 /spl mu/m, are measured to be as low as 290 A/cm/sup 2/ (L = 1500 /spl mu/m) and 110 A/cm/sup 2/, respectively, with characteristic temperature of T/sub 0/ and T/sub 1/ of 130 K and 400 K.

Published in:

Photonics Technology Letters, IEEE  (Volume:14 ,  Issue: 4 )

Date of Publication:

April 2002

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