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Side-mode gain in grating-tuned extended-cavity semiconductor lasers: investigation of stable single-mode operation conditions

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5 Author(s)
Godard, A. ; Lab. Charles Fabry, Inst. d''Optique, Orsay, France ; Pauliat, G. ; Roosen, Gerald ; Graindorge, P.
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In semiconductor lasers, nonlinear phenomena inside the active medium change the side-mode gain with respect to the static threshold-gain. For a given side mode, the sign and the magnitude of the change depend on the lasing-mode optical power and on the wavelength detuning from the lasing mode. If the side-mode gain is enhanced, mode-hopping can occur toward a side mode whose loss is higher than the lasing-mode one. Conversely, in the case of side-mode-gain suppression, the side-mode loss can be smaller with no mode-hop. In this paper, effects of carrier-density pulsation, carrier heating, and spectral-hole burning on the conditions of stable single-mode operation in grating-tuned single-mode extended-cavity semiconductor lasers are investigated. Taking into account the external cavity spectral selectivity and mode coupling, we present a theoretical analysis of experimental results. We perform calculations that compare well with the experimental data obtained with a 1.55-μm extended-cavity laser

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Quantum Electronics, IEEE Journal of  (Volume:38 ,  Issue: 4 )