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Development of GaN wide bandgap technology for microwave power applications

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4 Author(s)
Nuttinck, S. ; Georgia Inst. of Technol., Atlanta, GA, USA ; Gebara, E. ; Laskar, J. ; Harris, M.

A complete investigation of GaN-based wide-bandgap electronic devices and circuits has been presented. It includes an understanding of the device technology (e.g. characterization systems, testing, and modeling), of the devices' reliability (e.g. fabrication, thermal analysis), and the development of circuits and system applications, including radar and digital communication systems

Published in:

Microwave Magazine, IEEE  (Volume:3 ,  Issue: 1 )