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Improving contact performances of Al(Al/Pd) and i-a-SiGe:H interface using an additional very thin Sb layer

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4 Author(s)
Lin, Cha-Shin ; Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan ; Rong-Hwei Yeh ; Inn-Xin Li ; Jyh-Wong Hong

A very thin Sb layer, which is an n-type dopant for i-a-SiGe:H and was inserted between the Al or Al/Pd and i-a-SiGe:H layers, was successfully employed to reduce the specific contact resistance (Rsc) of these two interfaces. The Rsc of the Al(Al/Pd) and i-a-SiGe:H interface could be reduced from 4.42 (6.23×102) Ω-cm2 to 5×10-3 (4×10-3) Ω-cm2 by inserting a very thin Sb layer and using a proper low-temperature (<300°C) annealing process. Experimental results indicated that these two proposed interfaces could be used to enhance the current drivability of a Schottky barrier a-SiGe thin-film transistor

Published in:

Electronics Letters  (Volume:38 ,  Issue: 5 )