Referenced Items are not available for this document.
A very thin Sb layer, which is an n-type dopant for i-a-SiGe:H and was inserted between the Al or Al/Pd and i-a-SiGe:H layers, was successfully employed to reduce the specific contact resistance (Rsc) of these two interfaces. The Rsc of the Al(Al/Pd) and i-a-SiGe:H interface could be reduced from 4.42 (6.23×102) Ω-cm2 to 5×10-3 (4×10-3) Ω-cm2 by inserting a very thin Sb layer and using a proper low-temperature (<300°C) annealing process. Experimental results indicated that these two proposed interfaces could be used to enhance the current drivability of a Schottky barrier a-SiGe thin-film transistor
Published in:
Electronics Letters
(Volume:38
,
Issue:
5
)
Date of Publication: 28 Feb 2002
- Page(s):
- 253 - 255
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 7206836
- Digital Object Identifier :
- 10.1049/el:20020157
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 August 2002
- Issue Date :
- 28 Feb 2002
- Sponsored by :
- Institution of Engineering and Technology
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