By Topic

Effective crosstalk isolation through p/sup +/ Si substrates with semi-insulating porous Si

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Han-Su Kim ; Dept. of Mater. Sci. & Eng., California Univ., Los Angeles, CA, USA ; Jenkins, K.A. ; Ya-Hong Xie

Through-the-wafer porous Si (PS) trenches have been used to provide radio frequency (RF) isolation in Si because of their semi-insulating property. Reduction of crosstalk by 70 dB at 2 GHz and 45 dB at 8 GRz is demonstrated between Al pads with 800 μm separation on p/sup +/Si. Crosstalk suppression increases linearly with increasing PS width to beyond 320 μm. This suppression is degraded by one order of magnitude when the Si underneath the PS trenches remains and serves as a residual path for crosstalk. These results show that PS is an excellent candidate for RF isolation in modern VLSI technology.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 3 )