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Hot carrier-induced SOI MOSFET degradation under AC stress conditions

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6 Author(s)
Jae-Ki Lee ; Dept. of Electron. Eng., Incheon Univ., South Korea ; Nag-Jong Choi ; Yun-Bong Hyun ; Chong-Gun Yu
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The hot-carrier-induced device degradation in partially depleted silicon-on-insulator (SOI) devices has been investigated under AC stress conditions. The device degradation of both floating-body SOI devices and body contacted SOI devices have been measured and analyzed for different AC stress frequencies and gate bias voltages. Possible degradation mechanisms are suggested.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 3 )