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Importance of ballistic carriers for the dynamic response in sub-100 nm MOSFETs

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4 Author(s)
Okagaki, T. ; Graduate Sch. of Adv. Sci. of Matter, Hiroshima Univ., Japan ; Tanaka, M. ; Ueno, H. ; Miura-Mattausch, M.

Monte-Carlo simulations of the metal-oxide semiconductor field-effect transistor (MOSFET) switch-off characteristics are used to verify that ballistic carriers change the electric-field distribution along the MOSFET channel below 100 nm channel length. The field change has two main aspects: increase of field magnitude and shift of zero-field position from channel middle to source side. The shift of the zero-field position forces more carriers to flow to drain during switch-off. This results in a changed charge-partitioning ratio Q/sub s/(source)/Q/sub d/ (drain) for sub-100 nm MOSFETs from 60/40 (long channel) to 40/60 at 40 nm and a slower emptying of the channel during switch-off than expected from the channel length reduction.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 3 )

Date of Publication:

March 2002

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