By Topic

Importance of ballistic carriers for the dynamic response in sub-100 nm MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Okagaki, T. ; Graduate Sch. of Adv. Sci. of Matter, Hiroshima Univ., Japan ; Tanaka, M. ; Ueno, H. ; Miura-Mattausch, M.

Monte-Carlo simulations of the metal-oxide semiconductor field-effect transistor (MOSFET) switch-off characteristics are used to verify that ballistic carriers change the electric-field distribution along the MOSFET channel below 100 nm channel length. The field change has two main aspects: increase of field magnitude and shift of zero-field position from channel middle to source side. The shift of the zero-field position forces more carriers to flow to drain during switch-off. This results in a changed charge-partitioning ratio Q/sub s/(source)/Q/sub d/ (drain) for sub-100 nm MOSFETs from 60/40 (long channel) to 40/60 at 40 nm and a slower emptying of the channel during switch-off than expected from the channel length reduction.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 3 )