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On the high-temperature subthreshold slope of thin-film SOI MOSFETs

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5 Author(s)
T. Rudenko ; Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine ; V. Kilchytska ; J. P. Colinge ; V. Dessard
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This paper addresses the validity of the classical expression for the subthreshold swing (S) in SOI metal-oxide semiconductor field effect transistors (MOSFETs) at high temperature. Using numerical simulation, it is shown that two effects invalidate the classical expression of S at high temperature. Firstly, the depletion approximation becomes invalid and intrinsic free carriers must be taken into account to determine the effective body capacitance. Secondly, the charge-sheet model for the inversion layer becomes inaccurate due to a lowering of the electric field at the surface and a broadening of the inversion layer thickness in weak inversion. These effects must be taken into account to predict accurately the high-temperature subthreshold characteristics of both partially depleted and fully depleted SOI MOSFETs.

Published in:

IEEE Electron Device Letters  (Volume:23 ,  Issue: 3 )