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High power continuous operation of laser diodes at 1064 nm

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7 Author(s)
Murison, R.F. ; EG&G Optoelectron., Vaudreuil, Que., Canada ; Moore, A.H. ; Lee, S.R. ; Holehouse, N.
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High power operation of strained-layer quantum well laser diodes at 1064 nm wavelength is described, with up to 5.25 W of continuous wave power achieved from a single 100 mu m broad area stripe at room temperature before the onset of catastrophic facet damage. These devices also possess low threshold current and high power conversion efficiency.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 21 )