Referenced Items are not available for this document.
A novel process for fabricating self-aligned gate-overlapped LDD (SAGOLDD) poly-Si thin film transistors (TFTs) was demonstrated. Laser irradiation for dopant activation was performed from the backside of the quartz wafer. The graded LDD structure was naturally formed under the gate edges due to the lateral diffusion of the dopants during the laser activation. In comparison with the conventional laser-processed self-aligned poly-Si TFTs, the SAGOLDD poly-Si TFTs exhibited lower leakage current, suppressed kink effect, and higher reliability. Moreover, the proposed process was simple and very suitable for low-temperature processing.
Published in:
Electron Device Letters, IEEE
(Volume:23
,
Issue:
3
)
Date of Publication: March 2002
- Page(s):
- 133 - 135
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 7208059
- Digital Object Identifier :
- 10.1109/55.988815
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 August 2002
- Issue Date :
- March 2002
- Sponsored by :
- IEEE Electron Devices Society
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