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MOS sine function generator using exponential-law technique

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3 Author(s)
O. Ishizuka ; Dept. of Electron. Eng., Miyazaki Univ., Japan ; Z. Tang ; H. Matsumoto

A novel circuit configuration for generating the sine function in MOS integrated circuit technology is proposed. It is based on the exponential-law of MOS transistors operating in the subthreshold region. An experimental MOS sine generator and PSPICE simulations show that the MOS sine function generator achieves a total harmonic distortion of 0.71% over an angular range of +or-360 degrees . Typical power consumption is less than 1 mu W and the bandwidth is greater than 100 kHz.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 21 )