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The effect of triple well implant dose on performance of NMOS transistors

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3 Author(s)
Bourdelle, K.K. ; Agere Syst., Orlando, FL, USA ; Chaudhry, S. ; Chu, J.

The application of triple well (TW) structures provides important advantages for different types of silicon-integrated circuits. In a triple-well technology, the addition of a high energy implant allows the creation of a separate tub which is junction isolated from the substrate. We study the dependence of NMOS transistor performance and leakage current in diode test structures on the dose of a 1 MeV phosphorus TW implant. We observe that initial increase in the implant dose leads to increase in threshold voltage of the devices with a peak at a dose of about 1 × 1014 cm-2. With a further increase in dose the threshold voltage decreases: the decrease corresponds to the onset of Si amorphization induced by the TW implant. We explain this anomalous behavior using a model that accounts for suppression, due to formation of a buried amorphous layer, of transient enhanced diffusion of boron in the n-channel region. The dose dependence of leakage current in junction diode structures is explained by the formation of threading dislocations

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Electron Devices, IEEE Transactions on  (Volume:49 ,  Issue: 3 )