By Topic

Dynamic threshold voltage damascene metal gate MOSFET (DT-DMG-MOS) technology for very low voltage operation of under 0.7 V

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Yagishita, A. ; Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan ; Saito, T. ; Inuniiya, S. ; Matsuo, K.
more authors

We propose dynamic threshold-voltage damascene metal gate MOSFET (DT-DMG-MOS) technology for very low voltage operation (under 0.7 V). In this technology the metal gate is formed by the damascene gate process and directly connected to the well region (Si-body). Therefore, the connection between gate electrode and silicon body can be more easily fabricated in the DT-DMG transistor than with conventional technologies. Furthermore, we found that low threshold voltage (about 0.15 V reduction for CMOS), high drive current, excellent subthreshold swing (about 60 mV/decade), and uniform electrical characteristics (great reduction of threshold voltage deviation) were obtained in the transistors with midgap work function metal gates (Al/TiN or W/TiN) and low supply voltage (0.7 V)

Published in:

Electron Devices, IEEE Transactions on  (Volume:49 ,  Issue: 3 )