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Low-noise silicon avalanche photodiodes fabricated in conventional CMOS technologies

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6 Author(s)
Rochas, A. ; Inst. of Microsystems, Swiss Fed. Inst. of Technol., Lausanne, Switzerland ; Pauchard, A.R. ; Besse, Pierre-A. ; Pantic, D.
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We present a simple design technique that allows the fabrication of UV/blue-selective avalanche photodiodes in a conventional CMOS process. The photodiodes are fabricated in a twin tub 0.8 μm CMOS technology. An efficient guard-ring structure is created using the lateral diffusion of two n-well regions separated by a gap of 0.6 μm. When operated at a multiplication gain of 20, our photodiodes achieve a very low dark current of only 400 pA/mm2, an excess noise factor F=7 at λ=400 nm and a good gain uniformity. At zero bias voltage, the responsivity peaks at λ=470 nm, with 180 mA/W. It corresponds to a 50% quantum efficiency. Successive process steps are simulated to provide a comprehensive understanding of this technique

Published in:

Electron Devices, IEEE Transactions on  (Volume:49 ,  Issue: 3 )

Date of Publication:

Mar 2002

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