Cart (Loading....) | Create Account
Close category search window
 

Low-noise silicon avalanche photodiodes fabricated in conventional CMOS technologies

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Rochas, A. ; Inst. of Microsystems, Swiss Fed. Inst. of Technol., Lausanne, Switzerland ; Pauchard, A.R. ; Besse, Pierre-A. ; Pantic, D.
more authors

We present a simple design technique that allows the fabrication of UV/blue-selective avalanche photodiodes in a conventional CMOS process. The photodiodes are fabricated in a twin tub 0.8 μm CMOS technology. An efficient guard-ring structure is created using the lateral diffusion of two n-well regions separated by a gap of 0.6 μm. When operated at a multiplication gain of 20, our photodiodes achieve a very low dark current of only 400 pA/mm2, an excess noise factor F=7 at λ=400 nm and a good gain uniformity. At zero bias voltage, the responsivity peaks at λ=470 nm, with 180 mA/W. It corresponds to a 50% quantum efficiency. Successive process steps are simulated to provide a comprehensive understanding of this technique

Published in:

Electron Devices, IEEE Transactions on  (Volume:49 ,  Issue: 3 )

Date of Publication:

Mar 2002

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.