By Topic

Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

12 Author(s)
Choi, B.K. ; Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA ; Fleetwood, D.M. ; Massengill, L.W. ; Schrimpf, R.D.
more authors

The charge-to-breakdown of 3.3 nm oxynitride films shows significant degradation after irradiation with 342 MeV An ions. In contrast, 5.4 rim Al2O3 films exhibit much less degradation for similar heavy-ion stress

Published in:

Electronics Letters  (Volume:38 ,  Issue: 4 )