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In this letter, we demonstrated ultrahigh bandwidth and high output power performances of low-temperature-grown (LTG) GaAs-based metal-semiconductor-metal traveling wave photodetectors (MSM TWPDs) in the long wavelength regime (/spl sim/1300 nm). Ultrahigh bandwidth (1.3-ps pulsewidth with 234 GHz transformed 3-dB electrical bandwidth) was achieved with long-absorption-length (70-/spl mu/m) devices due to the improved microwave property in the MSM TWPDs and their high velocity-mismatch bandwidth. Under high optical power illumination, these 70-/spl mu/m-long MSM TWPD devices also exhibited superior output power-bandwidth-product performance due to their large absorption volumes. To the best of our knowledge, the demonstrated peak-output-voltage-bandwidth product (3.55 V, 160 GHz, 568 GHz-V) is the highest among the reported photodetectors for Icing optical communication wavelength (1.2 /spl mu/m-1.6 /spl mu/m) applications.
Date of Publication: March 2002