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Advanced materials techniques for large HgCdTe focal plane arrays

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5 Author(s)
Tennant, W.E. ; Rockwell International Sci. Center, Dallas, TX, USA ; Kozlowski, L.J. ; Bubulac, L.O. ; Gertner, E.R.
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The advent of advanced materials techniques (MOCVD and MBE) for growing HgCdTe on alternative substrates has opened new avenues for IR system development. 128×128 and 256×256 SWIR staring arrays of HgCdTe grown on sapphire substrates offer highly sensitive viewing of distant astronomical objects. Similar sized HgCdTe/sapphire MWIR arrays at 77 K have shown in-lab noise equivalent temperature differences <0.02 K and excellent operability and uniformity. LWIR diodes formed by ion-implantation in HgCdTe on either GaAs or Si substrates show performance comparable at 77 K to devices made in HgCdTe grown on more common II-VI substrates. This suggests that substrate producibility limits. The authors discuss the following topics: basic alternative-substrate HgCdTe materials and device architectures for SWIR, MWIR, and LWIR; description of SWIR and MWIR imaging arrays; LWIR results; and implications for future IR FPAs

Published in:

Advanced Infrared Detectors and Systems, 1990., Fourth International Conference on

Date of Conference:

5-7 Jun 1990

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