By Topic

A 1.75 GHz inductor-less CMOS low noise amplifier with high-Q active inductor load

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Jhy-Neng Yang ; Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsing-Chu, Taiwan ; Yi-Chang Cheng ; Terng-Yin Hsu ; Terng-Ren Hsu
more authors

A 1.75 GHz CMOS inductor-less low noise amplifier with high-Q active inductor load using 0.35 μm standard CMOS digital process is presented. In this low noise amplifier, the compact tunable high-Q active inductor load is connected to the common-gate configuration to improve the performance of the high power gain, low power consumption and simple matching characteristics. Not using any passive components results in a reduction of the area of chip and the complexity. HSPICE simulation has been performed to verify the performance of the designed low noise amplifier. It has been shown that the amplifier has a power gain of 24 dB(S21), S11 of -31 dB, S12 of -38.5 dB and S22 of -21.4 dB under 3.3 V power supply with 9.3 mW power consumption around at 1.75 GHz center frequency. The experimental chip fabricated occupies 0.057×0.056 mm2 chip area

Published in:

Circuits and Systems, 2001. MWSCAS 2001. Proceedings of the 44th IEEE 2001 Midwest Symposium on  (Volume:2 )

Date of Conference: