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Linearized high efficiency HBT MMIC dual band power amplifier module for L-band applications

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2 Author(s)
Noh, Y.S. ; Sch. of Eng., Inf. & Commun. Univ., Taejon, South Korea ; Park, C.S.

A highly linearized InGaP/GaAs HBT MMIC power amplifier is demonstrated using a linearized active bias circuit for PCS/wide-CDMA dual band applications. The MMIC amplifier has a single matching network and a single bias circuit commonly for the two different bands. The two-stage HBT MMIC power amplifier exhibits a linear power gain of 25.5(24.5) dB, an output power of 28(28) dBm, power added efficiency of 43(37)%, and ACPR of -41(-44) dBc at 1.25(5) MHz offset frequency under 3.0V operation voltage, and consumes quiescent current of 90(90) mA at output power of 0 dBm for PCS(Wide-CDMA) applications. The MMIC chip size with on-chip integrated linearizer and bias circuit is only 0.84mm×1.1mm. The MMIC chip was packaged on plastic substrates, and the power amplifier module size is as small as 6mm by 6mm

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Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific  (Volume:3 )

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