By Topic

Linearized high efficiency HBT MMIC dual band power amplifier module for L-band applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Noh, Y.S. ; Sch. of Eng., Inf. & Commun. Univ., Taejon, South Korea ; Park, C.S.

A highly linearized InGaP/GaAs HBT MMIC power amplifier is demonstrated using a linearized active bias circuit for PCS/wide-CDMA dual band applications. The MMIC amplifier has a single matching network and a single bias circuit commonly for the two different bands. The two-stage HBT MMIC power amplifier exhibits a linear power gain of 25.5(24.5) dB, an output power of 28(28) dBm, power added efficiency of 43(37)%, and ACPR of -41(-44) dBc at 1.25(5) MHz offset frequency under 3.0V operation voltage, and consumes quiescent current of 90(90) mA at output power of 0 dBm for PCS(Wide-CDMA) applications. The MMIC chip size with on-chip integrated linearizer and bias circuit is only 0.84mm×1.1mm. The MMIC chip was packaged on plastic substrates, and the power amplifier module size is as small as 6mm by 6mm

Published in:

Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific  (Volume:3 )

Date of Conference:

2001