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InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors on a GaAs substrate using InP metamorphic buffer layer

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5 Author(s)

Summary form only given. We report InP-based DHBTs grown on GaAs using InP as the metamorphic buffer layer. While AlGaAsSb and InAlAs have also been explored as buffer layers, the InP layers grown in our laboratory have substantially better thermal conductivity-16.1 W/mK for InP, compared with 10.5 W/mK for InAlAs and 8.4 W/mK for AlGaAsSb. With a typical HBT geometry and 2×105 W/cm2 dissipation, a thermal analysis indicates that the use of the InP buffer layer will reduce the operating junction temperature by 16-39 °C, a difference which can have a substantial impact upon device reliability

Published in:

Semiconductor Device Research Symposium, 2001 International

Date of Conference:

2001