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Effects of surface Fermi level pinning and surface state charging on control characteristics of nanometer scale Schottky gates formed on GaAs

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4 Author(s)
Kameda, A. ; Graduate Sch. of Electron. & Inf., Hokkaido Univ., Sapporo, Japan ; Kasai, Seiya ; Sato, Taketomo ; Hasegawa, Hideki

The purpose of this paper is to investigate the effect of the surface Fermi level pinning and surface state charging on gate control characteristics of nanometer-scale Schottky (nano-Schottky) gates on GaAs both theoretically and experimentally. This is a first attempt to establish a realistic model for complicated surface state phenomenon in III-V nanoelectronics

Published in:
Semiconductor Device Research Symposium, 2001 International

Date of Conference: 2001

Page(s):
626 - 629
Meeting Date :
05 Dec 2001-07 Dec 2001
Print ISBN:
0-7803-7432-0
INSPEC Accession Number:
7321471
Conference Location :
Washington, DC
Digital Object Identifier :
10.1109/ISDRS.2001.984598
Product Type:
Conference Publications

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