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Effects of surface Fermi level pinning and surface state charging on control characteristics of nanometer scale Schottky gates formed on GaAs

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4 Author(s)
Kameda, A. ; Graduate Sch. of Electron. & Inf., Hokkaido Univ., Sapporo, Japan ; Kasai, Seiya ; Sato, Taketomo ; Hasegawa, Hideki

The purpose of this paper is to investigate the effect of the surface Fermi level pinning and surface state charging on gate control characteristics of nanometer-scale Schottky (nano-Schottky) gates on GaAs both theoretically and experimentally. This is a first attempt to establish a realistic model for complicated surface state phenomenon in III-V nanoelectronics

Published in:

Semiconductor Device Research Symposium, 2001 International

Date of Conference:

2001