By Topic

A physical model of a CMOS varactor with high capacitance tuning range and its application to simulate a voltage controlled oscillator

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Maget, J. ; Dept. of Electr. Eng., Univ. of Bundeswehr, Munich, Germany ; Kraus, R. ; Tiebout, M.

A physical model of a CMOS varactor with high capacitance tuning range in multi-finger layout is presented. The model describes the voltage dependent capacitances and resistances and the parasitics due to connecting wires. Simulations of frequency tuning of a LC-oscillator employing the varactor are verified against measurements

Published in:

Semiconductor Device Research Symposium, 2001 International

Date of Conference:

2001