By Topic

Heterostructure device on the cleaved edge of a superlattice for terahertz power generation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Gribnikov, Z.S. ; Dept. of Electr. & Comput. Eng., Wayne State Univ., Detroit, MI, USA ; Vagidov, N.Z. ; Eisele, H. ; Mitin, V.V.
more authors

A novel device structure for terahertz power generation is proposed. The energy-wave vector dispersion relation ε(k) of electrons in this structure can be designed such that it contains sections of a negative effective mass within favorable ranges of energy ε and wave vector k. This design is based on the parallel electron transport in the combination of a quantum wall and a superlattice. The quantum well is grown on the cleaved edge of this superlattice and provides channel 1 with a low effective electron mass. Electrons in the superlattice as channel 2 have a large effective mass in the lowest quantization miniband of the superlattice. The effective thickness of the channel 2 can be controlled with the electric field from the p-n junction that is formed between n-type sheet doping concentration in the barrier layer of the quantum well and the p-type doping concentration in the superlattice. A simplified calculation scheme for obtaining the hybrid electron dispersion relation for the quantum real space transfer in such a two-channel combination is described and illustrated

Published in:

Semiconductor Device Research Symposium, 2001 International

Date of Conference: