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Two-terminal solid-state THz sources: state-of-the-art and novel devices

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1 Author(s)
Haddad, G.I. ; Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA

Summary form only given. This presentation will review the basic principles of operation and power-generation capabilities and limitations of various types of two-terminal devices including IMPATTs, TUNNETs, TEDs, RTDs and varactor multipliers. A new device will also be presented. As is well known, the power generation capability of solid-state devices is limited by various factors including the critical electric field for breakdown Ec, the saturated velocity of carriers, vs, the relative dielectric constant of the semiconductor material, εr, and the thermal resistance of the device. Most of these limitations can be circumvented by utilizing a vacuum-based diode. Therefore the basic properties and power generation capabilities of a vacuum-based diode utilizing tunneling from field-emitters, ballistic motion of carriers in vacuum which also has a relative dielectric constant of unity and good heat sinking capability will be presented. Because of the basic mechanisms involved we will refer to this device as a Ballistic Tunneling Transit Time Diode (BT3D)

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Semiconductor Device Research Symposium, 2001 International

Date of Conference: