By Topic

Mixed mode circuit and device simulation of RF harmonic distortion for high-speed SiGe HBTs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Malm, B.G. ; Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol. (KTH), Kista, Sweden ; Ostling, M.

Mixed mode circuit and device simulation has been used to investigated the linearity i.e. harmonic distortion for high-speed low voltage SiGe HBTs. Different Ge-profiles for reduced harmonic distortion have been discussed and compared to a conventional high-speed graded Ge-profile. Other RF figure-of-merits, such as maximum cut-off frequency and minimum noise figure have also been discussed. The influence of the Ge-profile on harmonic distortion was compared to the influence of different epitaxial collector doping profiles

Published in:

Semiconductor Device Research Symposium, 2001 International

Date of Conference:

2001