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Electrical characterization of rapid thermal oxides on Si0.887 Ge0.113 and Si0.8811Ge0.113C0.0059 alloys by capacitance-voltage and deep level transient spectroscopy techniques

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5 Author(s)
W. Feng ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore ; W. K. Choi ; L. K. Bera ; J. Mi
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Electrical characterization of rapid thermal oxides on Si0.887Ge0.113 and Si0.8811Ge0.113 C0.0059 alloys were carried out using the capacitance versus voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. A high interface trap density (~1012 eV-1 cm-2) and a high apparent doping level were obtained from the C-V measurements for the SiO2/Si0.8811Ge 0.113C0.0059 samples. The interface state density for the SiO2/Si0.887Ge0.113 system was found to be 3.15×1011 eV-1 cm-2. The C-V results at different temperatures showed that the high apparent doping levels of the SiO2/Si0.8811Ge0.113 C0.0059 samples might be due to the formation of SiC-related defects introduced by the high temperature oxidation process

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Semiconductor Device Research Symposium, 2001 International

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