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High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET

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9 Author(s)
Aniel, F. ; Inst. d''Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France ; Enciso-Aguilar, M. ; Giguerre, L. ; Crozat, P.
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100 nm T-gate Si/SiGe n-MODFETs are reported with new record fT of 76 GHz (105 GHz), and with fMAX of 107 GHz (170 GHz) at temperatures 300 K (50 K), low noise figure NFmin of 0.4 dB at 2.5 GHz and 300 K. Dependence on biases and temperature of HF performances and main parameters are presented. Experimental results are compared with data from physical simulations at short gate lengths to analyze carrier transport and device optimization

Published in:

Semiconductor Device Research Symposium, 2001 International

Date of Conference:

2001

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