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Dual work function metal gate CMOS transistors fabricated by Ni-Ti interdiffusion

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4 Author(s)
Polishchuk, I. ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Ranade, P. ; Tsu-Jae King ; Chenming Hu

A novel CMOS metal gate technology which uses a combination of two metals to achieve low and symmetrical threshold voltages for n- and p-channel devices is demonstrated. One of the gate electrodes is formed by metal interdiffusion, to avoid exposing the gate dielectric to a metal etch process. This approach preserves the uniformity and integrity of the delicate thin gate dielectric

Published in:

Semiconductor Device Research Symposium, 2001 International

Date of Conference:

2001