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A broadband GaN push-pull distributed microwave power amplifier

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7 Author(s)
Jong-Wook Lee ; Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; Green, B.M. ; Tilak, V. ; Sungjae Lee
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We have demonstrated a broadband GaN push-pull amplifier that used two 1.5 mm AlGaN/GaN HEMTs and a new balun. The balun structure is based on the compensation approach suggested by Marchand, which is preferred for low loss, broadband, and high frequency operation

Published in:

Semiconductor Device Research Symposium, 2001 International

Date of Conference:

2001

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