By Topic

Hot-carrier induced degradation and recovery in polysilicon-emitter bipolar transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Sheng, S.R. ; Device Phys., Nat. Res. Council of Canada, Ottawa, Ont., Canada ; McAlister, S.P. ; Lee, L.S. ; Hwang, H.P.

We have studied in detail the hot-carrier induced degradation in polysilicon-emitter NPN bipolar junction transistors (BJTs) with different emitter geometries. Our results confirm that the oxide/silicon interface traps generated by electrical stressing, are located in the same region as those present in unstressed devices - around the emitter perimeter. We also believe that positive charged defects are generated by the hot-carrier stressing, and that these trapped charges may be involved in the stress recovery at short times with lower activation energies. Reversible changes in the reverse bias stress current were observed especially at low reverse bias. This is possibly connected with the creation of interface/midgap states which can be involved in trap-assisted tunneling, both in reverse and forward bias. Hot-carrier induced degradation occurs in our devices mainly in the base-emitter (BE) but also in the base-collector (BC) diodes. This, we think, is related to the presence of field oxide in the BC region that has allowed hot holes to create trapped charge.

Published in:

Semiconductor Device Research Symposium, 2001 International

Date of Conference: