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Low temperature silicon wafer bonding for MEMS applications

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7 Author(s)
Ayon, A.A. ; Sony Semicond., San Antonio, TX, USA ; Zhang, X. ; Turner, K. ; Choi, D.
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This paper reports the investigation of low-temperature silicon wafer fusion bonding for MEMS applications. A bonding process utilizing annealing temperatures between 400/spl deg/C and 1100/spl deg/C was characterized. The silicon-silicon bonded interface was analyzed by Infrared Transmission (IT) and Transmission Electron Microscopy (TEM) and the bond strength was quantified by a four-point bending-delamination technique.

Published in:

Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on

Date of Conference:

24-24 Jan. 2002