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Formation of implanted piezoresistors under 100-nm thick for nanoelectromechanical systems

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5 Author(s)
C. Bergaud ; Lab. d'Analyse et d'Archit. des Systemes, CNRS, Toulouse, France ; E. Cocheteau ; L. Bary ; R. Plana
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Piezoresistors, with a thickness of 90 nm have been obtained by implanting boron fluorine into germanium-preamorphized silicon. Germanium implantation was carried out at a dose of 10/sup 15/ cm/sup -2/ and an energy of 60 keV to form a 80-nm-thick preamorphized layer prior to BF/sub 2/ implantation at a dose of 5 /spl times/ 10/sup 14/ cm/sup -2/ and an energy of 15 keV. The experimental sensitivity is 80% of the theoretical maximum. This shows that the germanium preamorphization step does not impact the sensitivity of the piezoresistors. Moreover, 1/f noise characteristics have been improved compared to those obtained in a previous work without using a preamorphizing implant.

Published in:

Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on

Date of Conference:

24-24 Jan. 2002