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Fabrication of high-aspect-ratio PZT thick film structure using sol-gel technique and SU-8 photoresist

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3 Author(s)
Futai, N. ; Dept. of Mechano-Informatics, The Univ. of Tokyo, Japan ; Matsumoto, K. ; Shimoyama, I.

An optimized sol-gel process and an SU-8 photoresist were used to produce thick and high-aspect-ratio lead zirconate titanate (PZT) structures on platinized silicon substrates. The fabrication process involved single coating, lapping of the gel, and rapid firing. The PZT structures made with this new process were crack-free and had good crystallinity. Their XRD patterns and ferroelectric properties showed that the structures were high quality PZT. Values of relative permittivity and dielectric loss of the PZT were over 300 and 0.03, respectively. The structures had thickness of 20 /spl mu/m or higher, and had aspect ratio of over one.

Published in:

Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on

Date of Conference:

24-24 Jan. 2002