Referenced Items are not available for this document.
Recently, ultra-small Si devices utilizing a quantum-size and/or Coulomb blockade effect have been received much attention to open a new Si device stream. This paper describes both electrical and geometrical properties of a Si quantum device with a Si nanowire channel fabricated by using an inorganic EB resist process. Especially, the physical structure of the Si quantum nanowire has well been investigated by TEM observation for the first time.
Published in:
Microprocesses and Nanotechnology Conference, 2001 International
Date of Conference: Oct. 31 2001-Nov. 2 2001
- Page(s):
- 170 - 171
- Meeting Date :
- 31 Oct 2001-02 Nov 2001
- Print ISBN:
- 4-89114-017-8
- INSPEC Accession Number:
- 7246755
- Conference Location :
- Shimane, Japan
- Digital Object Identifier :
- 10.1109/IMNC.2001.984144
- Product Type:
- Conference Publications
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