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Electrical and geometrical properties of a Si quantum nanowire device fabricated by an inorganic EB resist process

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6 Author(s)
T. Tsutsumi ; Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan ; K. Ishii ; H. Hiroshima ; S. Kanemaru
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Recently, ultra-small Si devices utilizing a quantum-size and/or Coulomb blockade effect have been received much attention to open a new Si device stream. This paper describes both electrical and geometrical properties of a Si quantum device with a Si nanowire channel fabricated by using an inorganic EB resist process. Especially, the physical structure of the Si quantum nanowire has well been investigated by TEM observation for the first time.

Published in:

Microprocesses and Nanotechnology Conference, 2001 International

Date of Conference:

Oct. 31 2001-Nov. 2 2001