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Ion beam lithography using membrane masks

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6 Author(s)
Kim, Y.S. ; Ion Beam Lab., Korea Inst. of Geoscience & Miner. Resources, Daejeon, South Korea ; Hong, W. ; Woo, H.J. ; Choi, H.W.
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In this paper, we demonstrate both by simulation and experiment that, by using membrane masks, sub-100 nm patterns can be generated with practical mask to wafer distances (∼10 μm). We discuss the straggling problem and membrane mask preparation, and present ion beam lithography results.

Published in:

Microprocesses and Nanotechnology Conference, 2001 International

Date of Conference:

Oct. 31 2001-Nov. 2 2001

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