By Topic

Nano-topography removal employing numerically controlled local dry etching

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Yanagisawa, M. ; Dept. of Material Sci., Univ. of Tokyo, Japan ; Okuya, T. ; Iida, S. ; Horiike, Y.

With increasing packaging density and Si wafer size in the ULSI process, higher qualities are required for a Si wafer, Recently, an important quality indicator of the Si wafer was derived, that is the flatness with a spatial wavelength of several nanometer size which exists on a Si surface, called nano-topography. The reason is that CMP (chemical mechanical polishing) used for STI (shallow trench isolation) in the device process generates the nano-topography on the Si wafer surface, thereby degrading the uniformity of the Si oxide thickness. The Si wafer manufacturers have made efforts to establish a removal technology for the nano-topography in the fabrication process, however, no one has been successful in providing a technology by which the nano-topography once it is generated is removed positively. We has developed the NC-LDE technology (Numerically Controlled Local Dry Etching) by fusing the local dry etching technology with numerically control technologies to meet the requirement of Si wafer flatness, and NC-LDE is now utilized in production lines. Accordingly, this paper reports on the removal performance of the present nano-topography by employing the NC-LDE technology.

Published in:

Microprocesses and Nanotechnology Conference, 2001 International

Date of Conference:

Oct. 31 2001-Nov. 2 2001