By Topic

Low temperature direct Cu-Cu bonding with low energy ion activation method

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Kim, T.H. ; Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Japan ; Howlader, M.M.R. ; Itoh, T. ; Suga, T.

This paper describes a copper wafer bonding process for three-dimensional integration and wafer-level packaging applications. Cu-Cu direct bonding at low temperature using a low energy ion activation method was investigated. 8-inch silicon wafers were coated with 80 nm copper and the copper surfaces were cleaned by irradiation of 50-100 eV argon ion beam before mating them together. The cleaned surfaces were examined by Auger electron spectroscopy (AES). It was observed that carbon contamination and the native oxide layer on the copper surface were effectively removed by 1 min ion beam irradiation without any wet cleaning process. After cleaning the surfaces, two wafers were brought into contact and pressed up to 1000 kgf in the bonding chamber at ultra high vacuum (UHV) pressure. The surfaces were examined by atomic force microscopy (AFM) and the bonded interface was investigated by tensile tests. Details of characterization of bonding interface of Cu-Cu and the effects of low energy ion beam on the bonding are described

Published in:

Electronic Materials and Packaging, 2001. EMAP 2001. Advances in

Date of Conference:

2001