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Neutron irradiation effects in high electron mobility transistors

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3 Author(s)
Jun, B. ; Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA ; Subramanian, S. ; Peczalski, A.

Neutron irradiation effects on the I-V characteristics of AlGaAs-GaAs high electron mobility transistors and AlGaAs-InGaAs heterostructure insulated gate field-effect transistors are studied. Physical mechanisms responsible for the observed degradation of the device parameters are discussed

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Nuclear Science, IEEE Transactions on  (Volume:48 ,  Issue: 6 )