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The effects of proton irradiation on SiGe:C HBTs

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9 Author(s)
Shiming Zhang ; Electeical & Comput. Eng. Dept., Auburn Univ., AL, USA ; Guofu Niu ; J. D. Cressler ; H. -J. Osten
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The effects of 63 MeV proton irradiation on SiGe:C heterojunction bipolar transistors (HBTs) are reported for the first time. The dc characteristics and neutral base recombination of these SiGe:C HBTs were investigated for proton fluences up to 5×1013 p/cm2. A comparison is made with SiGe HBTs fabricated in the same technology. Despite the fact that these SiGe:C HBTs degrade significantly during proton exposure, there is no indication that the carbon doping has any significant impact on the radiation response

Published in:

IEEE Transactions on Nuclear Science  (Volume:48 ,  Issue: 6 )