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Direct experimental evidence for atomic scale structural changes involved in the interface-trap transformation process

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5 Author(s)
Lenahan, P.M. ; Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, USA ; Mishima, T.D. ; Jumper, J. ; Fogarty, T.N.
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We have identified atomic scale processes involved in the so called "interface trap transformation" process. These changes involve the generation of a silicon "dangling bond" defect called Pb1. This defect is somewhat different in electronic density of states and slightly different in physical structure than the dominating radiation induced Si/SiO2 interface trap defect, the Pb0 center

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Nuclear Science, IEEE Transactions on  (Volume:48 ,  Issue: 6 )