Charge-collection dynamics of AlSb-InAs-GaSb resonant interband tunneling diodes (RITDs) [for MOBILE logic circuits]

Time-resolved charge-collection measurements performed on AlSb/InAs/GaSb resonant interband tunneling diodes (RITDs) with pulsed laser excitation exhibit complex behavior as a function of the device operating point. A model considering conventional charge-collection principles in combination with transient band-bending effects is proposed to describe the experimental results. In the proposed model, a transient distortion of the band structure of the device (transient band bending) induced by holes trapped in the GaSb valence band well modulates the DC current through the RITD. The manner in which this transient modulation is manifested in the experimental observable depends sensitively on the operating point of the device, giving rise to qualitatively different temporal signatures under different DC bias conditions.