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SEU induced by pions in memories from different generations

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6 Author(s)
S. Duzellier ; ONERA-DESP, Toulouse, France ; D. Falguere ; M. Tverskoy ; E. Ivanov
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This paper presents single-event upset cross-sections obtained with pions for a set of SRAMs/DRAMs from different generations. The experimental results show that pions are not more efficient than protons in creating upsets. Predictions using the two-parameters model are presented and discussed

Published in:

IEEE Transactions on Nuclear Science  (Volume:48 ,  Issue: 6 )